Microwave power transistors can reliably output RF power from hundreds of milliwatts to tens of watts at microwave frequencies. This requires the transistor to have good power gain and efficiency at microwave frequencies. High frequency and high power are contradictory, so the design of microwave power transistors must be considered from the aspects of the device structure, physical parameters, electrical performance, and heat conduction.
Because of the high operating frequency, microwave transistors must have fine geometric dimensions of microns or submicron. With the development of thin layer epitaxy technology, shallow junction diffusion or ion implantation technology, projection exposure, far ultraviolet exposure, X-ray exposure, electron beam exposure, and other micromachining technologies, the operating frequency, power and low noise performance of microwave transistors have been improved.
The main ways to improve the frequency and power performance of microwave power transistors are:
1. Increase the "perimeter/area ratio" of the emitter to increase the current capacity per unit emitter perimeter.
2. The use of shallow junction high concentration diffusion or ion implantation, in order to obtain a small base resistance, but also to reduce the base region, so as to shorten the minority in the base region of the transit time, improve the operating frequency.
3. The structure of multi-emitter unit dispersion is adopted, and the thickness of the epitaxial layer and substrate is thinned appropriately to reduce thermal resistance. The main structure forms of the device include comb, overlay, mesh, and diamond.
4. Adopt a multi-layer refractory metallization system with small electromigration, high current density, and small ohmic contact resistance (such as platinum titanium platinum, tungsten titanium gold, platinum molybdenum gold, etc.).
5. In order to improve the ability to resist voltage standing wave ratio and prevent secondary breakdown, a ballast resistor is usually connected in series at the emitter.
6. The shell of the microwave power transistor should not only have good heat dissipation performance but also good frequency performance. Therefore, beryllium oxide ceramics with electrical insulation and thermal conductivity comparable to metal are usually used as the tube seat. The current is evenly distributed across the emitter to increase the power output and obtain the highest power gain within a certain frequency band.
7. Reducing the inductance of the emitter lead is one of the keys to improving the gain.
Gallium arsenide Schottky field effect tube (GaAsMESFET) is a kind of microwave power transistor with excellent performance. Its operating frequency is much higher than that of silicon bipolar power tube. However, the thermal resistance of gallium arsenide is higher than that of silicon, so the power capacity of gallium arsenide is much smaller than that of silicon bipolar power tube. Bipolar transistors can operate at the lower end of the microwave spectrum with large power outputs (up to 100 watts at 400 megahertz, 50 watts at 1 gigahertz, and gallium arsenide field effector tubes at the higher end of the microwave spectrum with moderate power outputs of 20 to 25 watts at 6 to 8 gigahertz and 1 to 3 watts at 12 gigahertz). The power field effect transistor is a multi-child device, there is no secondary breakdown and low temperature current gain decrease problem. It operates in a wide temperature range (generally -55~12) and may also operate at 77K. The highest setting temperature is 20. Its radiation resistance is two orders of magnitude higher than silicon bipolar transistors.
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